UNIST Develops New Semiconductor Device for 6G and Autonomous Driving

According to foreign media reports, a research team from the Ulsan National Institute of Science and Technology (UNIST) in South Korea has developed a new type of semiconductor device optimized for the next generation of 6G and autonomous driving. This device features low power consumption and non-volatile operation characteristics. The innovative device can also be integrated into variable filter circuits that can adjust the center frequency, laying the groundwork for more compact and energy-efficient communication devices. Led by Professor Myungsoo Kim from the Department of Electrical Engineering and Professor Tae-Sik Yoon from the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, the team has developed a vanadium oxide (VOx)-based non-volatile radio frequency (RF) switch for next-generation wireless communication systems. The research paper was published in the journal Advanced Science. RF switches are essential semiconductor components in modern wireless communication systems, such as autonomous systems, smartphones, VR, and AR, as they control the flow of high-frequency signals within circuits by connecting or disconnecting specific paths, enabling reliable signal routing.